DocumentCode :
2144527
Title :
Verilog-A model for phase change memory simulation
Author :
Kwong, K.C. ; Li, Lin ; He, Jin ; Chan, Mansun
Author_Institution :
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
492
Lastpage :
495
Abstract :
A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A platform. A temperature sensing circuit is used to track the set and reset conditions of the PCM element. The current-voltage of PCM cell at the two different states and the change of states during set and reset can be correctly simulated by the model. The model has also been calibrated by comparing with experimental data reported in the literature.
Keywords :
circuit simulation; hardware description languages; phase change memories; temperature sensors; PCM cell; Verilog-A platform; circuit simulation; fully-customized phase change memory model; temperature sensing circuit; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Hardware design languages; Phase change materials; Phase change memory; Switches; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734588
Filename :
4734588
Link To Document :
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