• DocumentCode
    2144683
  • Title

    Transistor Conversion Matrix for Noise Simulations in Monolithic Microwave Oscillators

  • Author

    Claassen, M. ; Guttich, U.

  • Author_Institution
    L. f. Allg. Elektrotechnik u. Angew. Elektronik, Techn. Univ. Mÿnchen, Arcisstr. 21, D-80333 Mÿnchen, Germany. m.claassen@ei.tum.de
  • Volume
    2
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    753
  • Lastpage
    758
  • Abstract
    A conversion matrix formulation of oscillator noise is presented which is suitable for calculations of noise sidebands and AM- as well as FM-noise contributions as functions of external circuitry. The conversion matrix of the transistor is derived from the bias- amplitude-, frequency-, and phase-dependence of gate and drain currents near the operating condition. Circuit properties are included as additive terms. The formalism is applied to a realised monolithic 38 GHz GaAs-MESFET VCO. Comparison with measured noise sideband levels results in an effective intrinsic noise measure of 21 dB.
  • Keywords
    Active noise reduction; Baseband; Circuit noise; Frequency conversion; Image converters; Local oscillators; Microwave oscillators; Microwave transistors; Noise level; Noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.338250
  • Filename
    4139305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2144683