Transistor Conversion Matrix for Noise Simulations in Monolithic Microwave Oscillators

A conversion matrix formulation of oscillator noise is presented which is suitable for calculations of noise sidebands and AM- as well as FM-noise contributions as functions of external circuitry. The conversion matrix of the transistor is derived from the bias- amplitude-, frequency-, and phase-dependence of gate and drain currents near the operating condition. Circuit properties are included as additive terms. The formalism is applied to a realised monolithic 38 GHz GaAs-MESFET VCO. Comparison with measured noise sideband levels results in an effective intrinsic noise measure of 21 dB.