• DocumentCode
    2144914
  • Title

    Nano silicide formation in nano Si wires

  • Author

    Tu, K.N. ; Lu, Kuo-Chang ; Chou, Yi-Chia

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    579
  • Lastpage
    581
  • Abstract
    The review reports that the conductance of nanowire of Si is very sensitive to small changes in its surrounding potential and can be affected by the attachment of a small number of charged biological molecules. Using different receptors on the oxidized nano Si wire surface, the detection of the conductance change can be specific to the molecules absorbed on the wire surface. The combination of sensitivity and selectivity makes nanowire-based electronic device to be unique in having a great potential in bio-sensing. It is further reported that in order to have ultra-sensitivity for the detection of a single charged molecule or a virus, the length of the nanowire of Si has to be in the nm range or it requires a nanogapofSi.
  • Keywords
    electric admittance; nanowires; silicon; biological molecules; nanosilicide formation; nanowires; selectivity; sensitivity; Atomic layer deposition; Contacts; Electrodes; Nanobioscience; Nanoscale devices; Semiconductor thin films; Silicides; Sputtering; Thin film devices; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734604
  • Filename
    4734604