DocumentCode
2144914
Title
Nano silicide formation in nano Si wires
Author
Tu, K.N. ; Lu, Kuo-Chang ; Chou, Yi-Chia
Author_Institution
Dept. of Mater. Sci. & Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
579
Lastpage
581
Abstract
The review reports that the conductance of nanowire of Si is very sensitive to small changes in its surrounding potential and can be affected by the attachment of a small number of charged biological molecules. Using different receptors on the oxidized nano Si wire surface, the detection of the conductance change can be specific to the molecules absorbed on the wire surface. The combination of sensitivity and selectivity makes nanowire-based electronic device to be unique in having a great potential in bio-sensing. It is further reported that in order to have ultra-sensitivity for the detection of a single charged molecule or a virus, the length of the nanowire of Si has to be in the nm range or it requires a nanogapofSi.
Keywords
electric admittance; nanowires; silicon; biological molecules; nanosilicide formation; nanowires; selectivity; sensitivity; Atomic layer deposition; Contacts; Electrodes; Nanobioscience; Nanoscale devices; Semiconductor thin films; Silicides; Sputtering; Thin film devices; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734604
Filename
4734604
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