DocumentCode
2144959
Title
Theoretical and experimental results of a fully ballistic nano-FET with high gain
Author
Grémion, E. ; Niepce, D. ; Gennser, U. ; Cavanna, A. ; Jin, Y.
Author_Institution
Lab. de Photonique et de Nanostruct. (LPN), CNRS, Marcoussis, France
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
588
Lastpage
591
Abstract
We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET, the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point constriction.
Keywords
ballistic transport; conductors (electric); field effect transistors; 1D quantum ballistic conductor; 1D subbands; Buttiker model; Landauer-Buttiker formalism; ballistic nano-FET; saddle-point constriction; transconductance; voltage gain; Circuits; Conductors; Electrical resistance measurement; Electron mobility; FETs; Gallium arsenide; Nanostructures; Split gate flash memory cells; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734607
Filename
4734607
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