DocumentCode
2145092
Title
Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics
Author
Li, Ming-Fu ; Huang, Darning ; Liu, W.J. ; Liu, Z.Y. ; Luo, Yong ; Liao, C.C. ; Zhang, L.F. ; Gan, Z.H. ; Wong, Waisum
Author_Institution
Dept. Microelectron., Fudan Univ., Shanghai, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
604
Lastpage
607
Abstract
Some issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics are summarized. The resolutions of these issues from our point of view are illustrated.
Keywords
power MOSFET; silicon compounds; NBTI degradation; SiON; gate dielectrics; negative bias temperature instability; p-MOSFETs; Application specific integrated circuits; Degradation; Density measurement; Dielectrics; MOSFET circuits; Niobium compounds; Phase measurement; Pulse measurements; Stress measurement; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734611
Filename
4734611
Link To Document