Title :
Gate insulator process dependent NBTI in SiON p-MOSFETs
Author :
Mahapatra, S. ; Maheta, V.D.
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLIN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time, temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.
Keywords :
MOSFET; elemental semiconductors; silicon; silicon compounds; Si-SiON; SiON p-MOSFETs; gate insulator process; hole trapping; interface trap generation; Atomic measurements; Degradation; Insulation; MOSFET circuits; Niobium compounds; Presence network agents; Stress measurement; Temperature dependence; Time measurement; Titanium compounds;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734620
