Title :
Ferroelectric properties of BiFexCr1-xO3 thin film formed on Pt electrodes
Author :
Zhong, Zhiyong ; Sugiyama, Yoshihiro ; Ishiwara, Hiroshi
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
BiFexCr1-xO3 (x=0.4~0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of N2 and O2 (N2:O2=4:1) at 450, 500, 550 and 600°C. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films, and that double perovskite Bi2FeCrO6 crystallites might also be included. The leakage current density measured at room temperature was lower than 1×10-5 A/cm2 in the films annealed at 450°C. The remanent polarization increased with increase of the Fe ratio, and a large value of 45 ¿C/cm2 was obtained in the BiFe0.6Cr0.4O3 thin film, when it was measured at 1.9 MV/cm and 50 kHz. Fatigue property was also improved and no degradation of the remanent polarization was observed in the BiFe0.4Cr0.6O3 film by switching cycles up to 1 × 108.
Keywords :
X-ray diffraction; bismuth compounds; crystallites; dielectric polarisation; fatigue; ferroelectric switching; ferroelectric thin films; iron compounds; leakage currents; BiFeCrO; X-ray diffraction analysis; calcined films; chemical solution deposition; crystallites; fatigue property; ferroelectric properties; leakage current density; polycrystalline grains; remanent polarization; switching cycles; temperature 450 degC; temperature 500 degC; temperature 550 degC; temperature 600 degC; thin film; Annealing; Chemicals; Chromium; Ferroelectric materials; Polarization; Semiconductor thin films; Sputtering; Substrates; Temperature measurement; X-ray diffraction; BiCrO3; BiFeO3; FeRAM; fatigue; ferroelectric; remanent polarization;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734627
