Title :
Operational optimization of GaN thin film growth employing numerical simulation in a showerhead MOCVD reactor
Author :
Yin, Haibo ; Wang, Xiaoliang ; Hu, Guoxin ; Ran, Junxue ; Xiao, Hongling ; Li, Jinmin
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
A detailed reaction-transport model was studied in a showerhead reactor for metal organic chemical vapor deposition of GaN film by using computational fluid dynamics simulation. It was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. By above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), P (operational pressure) and the rate of susceptor rotation to improve the film growth.
Keywords :
MOCVD coatings; gallium compounds; semiconductor growth; wide band gap semiconductors; GaN; MOCVD; computational fluid dynamics simulation; numerical simulation; operational optimization; reaction transport model; showerhead reactor; susceptor rotation; thin film growth; Chemical vapor deposition; Computational fluid dynamics; Computational modeling; Gallium nitride; Inductors; MOCVD; Numerical simulation; Organic chemicals; Temperature; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734630
