Title :
Growth and characterization of Si/SiN/SiC structures by APCVD process
Author :
Yang, Yin-tang ; Jia, Hu-Jun ; Chai, Chang-Chun ; Li, Yue-jin
Author_Institution :
Key Lab. of Educ. Minist. for WBG Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates¿ surface lead to a change of SiN from poly-crystal to quasi-crystal. The crystallized surface of SiN prevent the forming of Si-C bonding and growth of SiC films. This change can be controlled with a lower growth temperature and then a poly SiC films preferential orientation grown along <111> direction is obtained contained some poly-silicon grains.
Keywords :
X-ray diffraction; chemical vapour deposition; elemental semiconductors; quasicrystals; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; silicon compounds; texture; wide band gap semiconductors; APCVD process; SEM; Si-SiC-SiN; XRD; atmospheric pressure chemical vapor deposition; crystallinity; gas system reaction; growth films; high-temperature pretreatment; microstructure; poly-silicon grains; polycrystal films; preferential orientation growth; quasicrystals; Atomic measurements; Chemical vapor deposition; Crystallization; Hydrogen; Insulation; Semiconductor films; Silicon carbide; Silicon compounds; Substrates; Temperature; APCVD; CVD; films; poly-crystal SiC;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734635
