Title :
Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer
Author :
Liu, Shu-Yi ; Chen, Tao ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower UV emission at 380 nm was observed with weaker deep-level visible emission for the ZnO films with a homo-buffer layer using room-temperature (RT) photoluminescence (PL) spectra. The electrical results show that the carrier concentration of the films with buffer layer is decreased and the Hall mobility is increased, indicating that a ZnO homo-buffer layer can effectively improve the crystallinity of the films and improve both electrical and optical properties.
Keywords :
Hall mobility; II-VI semiconductors; X-ray diffraction; buffer layers; carrier density; crystallisation; grain size; photoluminescence; scanning electron microscopy; semiconductor thin films; sol-gel processing; surface morphology; texture; wide band gap semiconductors; zinc compounds; Hall mobility; Lotering orientation factor; PVD buffer layer; SEM; UV emission; XRD; ZnO; carrier concentration; crystallinity; grain size; homo-buffer layer; preferential c-axis orientation; room-temperature photoluminescence spectra; sol-gel thin film; structural property; surface morphology; temperature 293 K to 298 K; weaker deep-level visible emission; Atherosclerosis; Buffer layers; Crystallization; Grain size; Optical buffering; Optical films; Photoluminescence; Surface morphology; X-ray scattering; Zinc oxide;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734638