DocumentCode :
2145850
Title :
Physics of Future Ultra High Speed Transistors - Part 1: HBT
Author :
Kasper, Erich ; Eberhardt, Jochen
Author_Institution :
Institut fÿr Halbleitertechnik, Universitÿt Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
Volume :
1
fYear :
1999
fDate :
Oct. 1999
Firstpage :
151
Lastpage :
154
Abstract :
An overview about current status of SiGe-HBT production is given. Advanced SiGe-HBTs are predicted to reach in near future fT=200 GHz. Design examples are given.
Keywords :
Bipolar transistors; Crystalline materials; Doping; Frequency; Heterojunction bipolar transistors; Photonic band gap; Physics; Production; Silicon; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
Type :
conf
DOI :
10.1109/EUMA.1999.338295
Filename :
4139390
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2145850
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