Title :
Oxidized layer of CdZnTe studied by C-V characteristics
Author :
Fan, Jian-rong ; Sang, Wen-bin ; Lu, Vue ; Min, Jia-hua ; Liang, Xiao-yan ; Hu, Dong-ni
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
Abstract :
In this paper, the CZT oxidized layers on cadmium zinc telluride (CZT) wafer formed by two-step chemical passivation process (KOH-KCl + NH4F/H2O2) were investigated by using XRD, ED-XRF, SEM. The results show that the oxidized layer obtained by using this process has a very uniform and compact morphology and consists mainly of TeO2, TeO3 and CdTeO3. In particular, the thickness of the oxidized layer on the CZT was obtained by using C-V measurements for the first time. The dependence of the thickness of the oxidized layer on the passivation time was obtained and the main factors influencing the results of the C-V measurements were also discussed.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray fluorescence analysis; cadmium compounds; electron diffraction; oxidation; passivation; scanning electron microscopy; wide band gap semiconductors; zinc compounds; C-V characteristics; CdZnTe; ED-XRF; SEM; XRD; cadmium zinc telluride wafer; compact morphology; oxidized layer; passivation time; two-step chemical passivation process; Cadmium compounds; Capacitance-voltage characteristics; Chemical processes; Morphology; Particle measurements; Passivation; Thickness measurement; Time measurement; X-ray scattering; Zinc compounds;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734642
