DocumentCode :
2145943
Title :
High transition temperature superconducting thin films: in-situ growth, processing and properties
Author :
Lathrop, D.K. ; Russek, S.E. ; Tanabe, K. ; Buhrman, R.A.
Author_Institution :
Sch. of Appl. & Eng. Phys., Cornell Univ., Ithaca, NY, USA
fYear :
1988
fDate :
11-14 Dec. 1988
Firstpage :
278
Lastpage :
281
Abstract :
A high-pressure reactive evaporation process and a high-pressure reactive sputtering process have been developed for the growth of high-quality thin films of YBa/sub 2/CU/sub 3/O/sub 7/. Both techniques, when used with heated substrates, are effective in the formation of the 123 phase in situ during the film growth. With reactive evaporation only a cooldown anneal in a higher pressure oxygen ambient is necessary to obtain good superconducting properties. For the reactive sputtering process, a brief, postgrowth, rapid thermal anneal is required for best results. Fully epitaxial growth has been achieved with single-crystal MgO substrates. The resultant films, which can be quite smooth and uniform, have been patterned to micron and submicron dimensions, and the transport properties of these microstructures have been examined. Results are presented on critical currents and Josephson weak links.<>
Keywords :
high-temperature superconductors; magnesium compounds; sputter deposition; superconducting epitaxial layers; superconducting thin films; yttrium compounds; 123 phase; HTS; Josephson weak links; YBa/sub 2/CU/sub 3/O/sub 7/; YBa/sub 2/Cu/sub 3/O/sub 2/-MgO; cooldown anneal; critical currents; epitaxial growth; heated substrates; high temperature superconductors; high-pressure reactive evaporation process; high-pressure reactive sputtering process; in-situ growth; microstructures; preparation; processing; properties; rapid thermal anneal; single crystal MgO substrate; Epitaxial growth; Microstructure; Rapid thermal annealing; Rapid thermal processing; Sputtering; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting thin films; Superconducting transition temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1988.32811
Filename :
32811
Link To Document :
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