High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8° off-oriented substrates in the size of 10 mm × 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 ¿m/h and the optimal epilayer was obtained at 1600°C with TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 ¿m×10 ¿m area.