The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X-ray photoelectron spectroscopy (HX-PES)

Author

Jin, C.G. ; Kobata, M. ; Sasaki, Y. ; Okashita, K. ; Nakamoto, K. ; Mizuno, B. ; Ikenaga, E. ; Kobayashi, K.

Author_Institution

Ultimate Junction Technol. Inc., Moriguchi, Japan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

796

Lastpage

798

Abstract

We measured HX-PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre-amorphizaiton implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si-Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge-PAI+I/I sample. Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA.

Keywords

X-ray photoelectron spectra; amorphisation; ion implantation; semiconductor doping; chemical binding states; hard X-ray photoelectron spectroscopy; ion implantation; ultra shallow plasma doping; Chemicals; Doping; Energy measurement; Ion implantation; Plasma chemistry; Plasma density; Plasma immersion ion implantation; Plasma measurements; Plasma x-ray sources; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734652

Filename

4734652