Title :
Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature
Author :
Matmon, Guy ; Lynch, Stephen A. ; Townsend, Paul ; Paul, Douglas J. ; Bain, Mike ; Gamble, Harry S. ; Zhang, Jing ; Ikonic, Zoran ; Kelsall, Robert W. ; Harrison, Paul
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
Abstract :
The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.
Keywords :
boron; electroluminescence; elemental semiconductors; impurities; infrared spectra; phosphorus; silicon; submillimetre wave spectra; thermo-optical effects; S:P; Si:B; absorption characteristics; boron-doped silicon; doping concentrations; impurity dopants; phosphorous-doped silicon; temperature effect; terahertz emission; terahertz optical transitions; Absorption; Boron; Educational institutions; Electroluminescence; Frequency; Impurities; Laboratories; Laser transitions; Silicon; Temperature distribution;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516386
