DocumentCode
2146154
Title
Leakage temperature dependency modeling in system level analysis
Author
Huang, Huang ; Quan, Gang ; Fan, Jeffrey
Author_Institution
Florida Int. Univ., Miami, FL, USA
fYear
2010
fDate
22-24 March 2010
Firstpage
447
Lastpage
452
Abstract
As the semiconductor technology continues its marching toward the deep sub-micron domain, the strong relation between leakage current and temperature becomes critical in power-aware and thermal-aware design for electronic systems. Previous circuit-level research results can capture the leakage/temperature dependency accurately, but can be too complex and thus ineffective in high level system design. In this paper, we study a large spectrum of leakage power models that are able to account for the leakage/temperature dependency, and in the meantime, are simple enough and suitable for system level design. We analyze and compare the tradeoff between the complexity and accuracy of these models empirically. Our experimental results strengthen the important role that the leakage power consumption plays in the electronic system design as the transistor size continues to shrink. More importantly, our results highlight the fact that it is vital to take the leakage/temperature and leakage/supply voltage dependency into considerations for high level power and thermal aware system level design.
Keywords
integrated circuit design; integrated circuit modelling; leakage currents; network analysis; power aware computing; deep sub-micron domain; electronic systems; high level system design; leakage current; leakage power models; leakage temperature dependency modeling; leakage/temperature dependency; power-aware design; semiconductor technology; system level analysis; thermal-aware design; Circuits; Energy consumption; Leakage current; Nonlinear equations; Power generation; Power system modeling; System-level design; Temperature dependence; Thermal management; Voltage; Leakage power; leakage/temperature dependency; power aware; system level design; thermal aware;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location
San Jose, CA
ISSN
1948-3287
Print_ISBN
978-1-4244-6454-8
Type
conf
DOI
10.1109/ISQED.2010.5450539
Filename
5450539
Link To Document