DocumentCode :
2146191
Title :
Plasma stream homogeneity in metal plasma immersion ion implantation and deposition
Author :
Mändl, S. ; Rauschenbach, B.
Author_Institution :
Inst. fur Oberflachenmodifizierung, Leipzig, Germany
fYear :
2002
fDate :
2002
Firstpage :
455
Lastpage :
458
Abstract :
The homogeneity of metal plasma immersion ion implantation and deposition (MePIIID) was investigated for flat substrates and the materials systems Al, AlN, Ti, TiN, TiO2, and ZnO. An influence of pulse voltage, cathode material and backfill on the lateral homogeneity was observed, so that the plasma stream emanating from the arc as well as the plasma sheath evolving around the substrates contribute to the radial homogeneity in MePIIID.
Keywords :
metals; plasma deposition; plasma immersion ion implantation; Al; AlN; Ti; TiN; TiO2; ZnO; backfill; cathode material; flat substrates; metal plasma immersion ion implantation and deposition; plasma stream homogeneity; pulse voltage; Acceleration; Cathodes; Plasma accelerators; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma sources; Voltage; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2002. 20th International Symposium on
Print_ISBN :
0-7803-7394-4
Type :
conf
DOI :
10.1109/ISDEIV.2002.1027407
Filename :
1027407
Link To Document :
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