DocumentCode
2146191
Title
Plasma stream homogeneity in metal plasma immersion ion implantation and deposition
Author
Mändl, S. ; Rauschenbach, B.
Author_Institution
Inst. fur Oberflachenmodifizierung, Leipzig, Germany
fYear
2002
fDate
2002
Firstpage
455
Lastpage
458
Abstract
The homogeneity of metal plasma immersion ion implantation and deposition (MePIIID) was investigated for flat substrates and the materials systems Al, AlN, Ti, TiN, TiO2, and ZnO. An influence of pulse voltage, cathode material and backfill on the lateral homogeneity was observed, so that the plasma stream emanating from the arc as well as the plasma sheath evolving around the substrates contribute to the radial homogeneity in MePIIID.
Keywords
metals; plasma deposition; plasma immersion ion implantation; Al; AlN; Ti; TiN; TiO2; ZnO; backfill; cathode material; flat substrates; metal plasma immersion ion implantation and deposition; plasma stream homogeneity; pulse voltage; Acceleration; Cathodes; Plasma accelerators; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma sources; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Discharges and Electrical Insulation in Vacuum, 2002. 20th International Symposium on
Print_ISBN
0-7803-7394-4
Type
conf
DOI
10.1109/ISDEIV.2002.1027407
Filename
1027407
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