Title :
Advanced silicon and silicon-based materials for fast transition from micrometer- to nanometer-scale integrated-circuit technology
Author :
Tu, Hailing ; Dai, Xiaolin ; Wan, Guanliang ; Chen, Haibin ; Huang, Junhui ; Xiao, Qinghua ; Gao, Yu ; Zhou, Qigang ; Zhang, Guohu ; Chang, Qing
Author_Institution :
Nat. Eng. Res. Center for Semicond. Mater., Gen. Res. Inst. for Nonferrous Metals, Beijing, China
Abstract :
300 mm silicon single crystals have been grown using 24-28¿ hot zones with the aid of numerical simulation. Mechanical strength of silicon seeds has been tested and a new style seed chuck developed. The damage layers during cutting, double side grinding (DSG) and double side polishing (DSP) have been investigated. The processing technology and the defects in silicon based materials such as silicon on insulator (SOI) and silicon germanium (SiGe) have also been discussed.
Keywords :
elemental semiconductors; integrated circuit manufacture; nanoelectronics; numerical analysis; silicon; double side grinding; double side polishing; micrometer-scale integrated-circuit technology; nanometer-scale integrated-circuit technology; numerical simulation; silicon germanium; silicon on insulator; silicon-based materials; size 300 mm; Crystalline materials; Crystals; Digital signal processing; Rough surfaces; Semiconductor materials; Silicon on insulator technology; Surface morphology; Surface roughness; Thermal stresses; Wheels;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734657
