Advanced silicon and silicon-based materials for fast transition from micrometer- to nanometer-scale integrated-circuit technology

Author

Tu, Hailing ; Dai, Xiaolin ; Wan, Guanliang ; Chen, Haibin ; Huang, Junhui ; Xiao, Qinghua ; Gao, Yu ; Zhou, Qigang ; Zhang, Guohu ; Chang, Qing

Author_Institution

Nat. Eng. Res. Center for Semicond. Mater., Gen. Res. Inst. for Nonferrous Metals, Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

769

Lastpage

772

Abstract

300 mm silicon single crystals have been grown using 24-28Â¿ hot zones with the aid of numerical simulation. Mechanical strength of silicon seeds has been tested and a new style seed chuck developed. The damage layers during cutting, double side grinding (DSG) and double side polishing (DSP) have been investigated. The processing technology and the defects in silicon based materials such as silicon on insulator (SOI) and silicon germanium (SiGe) have also been discussed.

Keywords

elemental semiconductors; integrated circuit manufacture; nanoelectronics; numerical analysis; silicon; double side grinding; double side polishing; micrometer-scale integrated-circuit technology; nanometer-scale integrated-circuit technology; numerical simulation; silicon germanium; silicon on insulator; silicon-based materials; size 300 mm; Crystalline materials; Crystals; Digital signal processing; Rough surfaces; Semiconductor materials; Silicon on insulator technology; Surface morphology; Surface roughness; Thermal stresses; Wheels;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734657

Filename

4734657