Monolithic device fabrication using high-T/sub c/ superconductor

Author

Yoshida, A. ; Tamura, H. ; Hasuo, S.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

282

Lastpage

285

Abstract

A selective plasma oxidation technique was developed to fabricate monolithic high-T/sub c/ superconducting devices. The technique consisted of deoxygenation of Ba/sub 2/YCu/sub 3/O/sub 7-x/ films and subsequent selective film oxidation. Planar superconductor-normal-superconductor (SNS) diodes were then fabricated from high-T/sub c/ Ba-Y-Cu-O thin films. Regions serving as superconducting electrodes in the SNS diode were embedded in the deoxygenated film. The planar SNS diodes exhibited BCS (Borden-Cooper-Schrieffer)-like gap structures in their conductance-voltage characteristics below 50 K.<>

Keywords

barium compounds; high-temperature superconductors; integrated circuit technology; oxidation; superconducting junction devices; superconducting thin films; yttrium compounds; 10 to 50 K; Ba/sub 2/YCu/sub 3/O/sub 7-x/ films; Borden-Cooper-Schrieffer gaps; SNS diode; conductance-voltage characteristics; deoxygenated film; deoxygenation; high temperature superconductors; high-T/sub c/ superconductor; monolithic device fabrication; selective film oxidation; selective plasma oxidation technique; superconducting electrodes; superconductor normal-superconductor diodes; Annealing; Fabrication; Oxidation; Plasma devices; Plasma properties; Plasma temperature; Semiconductivity; Semiconductor device doping; Semiconductor films; Superconducting films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32812

Filename

32812