Title :
A comprehensive model for gate delay under process variation and different driving and loading conditions
Author :
Gao, Mingzhi ; Ye, Zuochang ; Peng, Yao ; Wang, Yan ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Gate delay models taking process variation into account are an essential part of ascendant statistical static timing analysis (SSTA). The statistical gate delay models in being, most of which take the forms of low order polynomials, are suffering from either enormous characterization cost or poor accuracy. We propose in this paper a statistical comprehensive gate delay model including both the effects of process variation and operating conditions, i.e. input slope and output load. With the help of effective dimension reduction, we can use only a couple of random variables to present the effect of process variation, which enables a simple modeling methodology as well as a cheap characterization process. This model can be changed into the polynomial forms required in some block based SSTA or directly used in Monte Carlo based SSTA. The error of the model is shown well below 5% compared with golden Monte Carlo data.
Keywords :
Monte Carlo methods; polynomials; semiconductor device models; statistical analysis; Monte Carlo; dimension reduction; driving condition; loading condition; low order polynomials; process variation; statistical gate delay model; statistical static timing analysis; Costs; Delay effects; Fitting; Inverters; Libraries; Monte Carlo methods; Polynomials; Random variables; Response surface methodology; Timing; comprehensive gate delay model; effective dimension reduction; process variation;
Conference_Titel :
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-6454-8
DOI :
10.1109/ISQED.2010.5450543