Improvement of dielectric properties of ZrO2 films prepared by limited reaction sputtering

Author

Zhou, Ying ; Kojima, Nobuo ; Sasaki, Kimihiro ; Kumeda, Minoru

Author_Institution

Grad. Sch. of Natural Sci. & Technol., Kanazawa Univ., Kanazawa, Japan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

784

Lastpage

787

Abstract

We investigated the growth of crystalline ZrO₂ film prepared on p-Si(100) by limited reaction sputtering system under different growth temperatures from 400 to 700Â°C. The structural characteristics of the samples were studied by XRD, RHEED and AFM, which provided a solid identification of the phase transformation from monoclinic phase to tetragonal phase. The dielectric properties were studied by C-V and I-V measurements on Au/ZrO₂/p-Si(100) MIS structures, suggesting that the tetragonal ZrO₂ thin film shows excellent dielectric performances including a high permittivity up to 32 as well as a negligible flatband voltage shift in C-V curves.

Keywords

MIS structures; X-ray diffraction; atomic force microscopy; crystal structure; dielectric thin films; electrical conductivity; elemental semiconductors; insulating thin films; permittivity; reflection high energy electron diffraction; silicon; solid-state phase transformations; sputter deposition; zirconium compounds; AFM; Au-ZrO₂-Si; C-V measurements; I-V measurements; MIS structures; RHEED; Si; XRD; crystalline film growth; dielectric films; growth temperatures; limited reaction sputtering; monoclinic-tetragonal phase transformation; p-Si (100); permittivity; temperature 400 degC to 700 degC; Capacitance-voltage characteristics; Crystallization; Dielectric measurements; Dielectric thin films; Gold; Permittivity measurement; Solids; Sputtering; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734661

Filename

4734661