Title :
1.5dB Noise Figure Ka-Band Low Noise Monolithic Amplifier using 0.15um T-gate Pseudomorphic Heterojunction FET´s
Author :
Takahashi, K. ; Maruhashi, K. ; Negishi, H. ; Eda, T. ; Tsutsui, H.
Author_Institution :
ULSI Device Development Laboratories, NEC Corporation
Abstract :
Ka-band ultra low-noise three stage monolithic amplifier has been developed using 0.15um T-shaped gate pseudomorphic heterojunction FETs (p- HJFETs). The noise figure of the developed amplifier are less than 1.5dB with an associated gain of 20dB in 27-31GHz band.
Keywords :
Circuit noise; Electrodes; Electron mobility; FETs; Heterojunctions; Laboratories; Low-noise amplifiers; National electric code; Noise figure; Noise measurement;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338310
