Title :
Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power
Author :
Zhang, Lei ; Guo, Hao-Wen ; Zhang, Chi ; Zhang, Wei ; Ding, Shi-Jin
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4, N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film decrease with increasing the RF power. In the present experiment, a k value of 2.35 is achieved while retaining a low leakage current of 2.7×10-7A/cm2 at 7.8MV/cm.
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; high-k dielectric thin films; infrared spectra; leakage currents; plasma CVD; silicon compounds; FTIR; PECVD; SiCON; XPS; bonds; carbon-doped silicon oxide film; deposition rate; film growth; leakage current; low-dielectric-constant films; nitride-doped silicon oxide film; voltage 7.8 MV; Dielectric constant; Dielectric materials; Dielectric measurements; Electrodes; Polymer films; Radio frequency; Semiconductor films; Silicon; Substrates; Thermal resistance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734662
