DocumentCode :
2146302
Title :
A MATLAB-based technique for defect level estimation using data mining of test fallout data versus fault coverage
Author :
Chakraborty, Kanad
Author_Institution :
Cypress Semicond., Beaverton, OR, USA
fYear :
2010
fDate :
22-24 March 2010
Firstpage :
418
Lastpage :
421
Abstract :
To achieve progressively lower defective parts per million (PPM) levels in silicon, we need to target a wide variety of fault and defect models, such as stuck-at, at-speed and bridging faults and IDDQ/IDD failures, and apply tests targeting each such model. This paper describes a novel MATLAB®-based methodology for quantifying PPM improvements based on fallout data during manufacturing test application. It is seen that tests that target a range of defect models, each with moderately high levels of coverage, may be better in terms of lowering PPM than those that target a single fault model with high levels of coverage. This analysis is explained using regression models for PPM yield versus fault/defect coverage. This approach is beneficial to semiconductor companies for calibrating their fault coverage goals to meet PPM requirements from automotive and other customers.
Keywords :
data mining; electronic engineering computing; fault diagnosis; integrated circuit testing; integrated circuit yield; logic testing; regression analysis; silicon; IDDQ/IDD failure; MATLAB; PPM improvement; PPM level; PPM yield; Si; at-speed fault; bridging fault; data mining; defect coverage; defect level estimation; defect model; defective parts per million level; fault coverage; fault model; manufacturing test application; regression model; semiconductor company; stuck-at fault; test fallout data; Automotive engineering; Computer languages; Data mining; Delay; Manufacturing processes; Mathematical model; Pulp manufacturing; Semiconductor device manufacture; Semiconductor device modeling; Semiconductor device testing; Defective parts per million (PPM); fallout data; yield;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location :
San Jose, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4244-6454-8
Type :
conf
DOI :
10.1109/ISQED.2010.5450545
Filename :
5450545
Link To Document :
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