DocumentCode
2146327
Title
Low-Power Receiver MMIC for DECT
Author
Kucera, Jakub J. ; Lott, Urs
Author_Institution
ETH Zÿrich, Lab. for EM Fields and Microwave Electronics, Gloriastr. 35, CH-8092 Zirich, Switzerland; FAX +41 1 632 11 98; Tel +41 1 632 55 51, Email: kucera@ifh.ee.ethz.ch
Volume
1
fYear
1999
fDate
Oct. 1999
Firstpage
218
Lastpage
221
Abstract
A fuly integrated receiver for the DECT (Digital Enhanced Cordless Telephone) system consisting of a SPST switch, a low noise amplifier, a resistive mixer, and a voltage controlled oscillator has been fabricated on a single chip with a standard GaAs MESFET foundry process. The receiver has a SSB noise figure of 2.6 dB including the switch, more than 16 dB conversion gain at a power consumption of less than 30 mW. The chip also features on-chip 50¿ matching for all ports and the bias circuits such that only a single supply voltage must be applied..
Keywords
Amplitude modulation; Foundries; Gain; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Switches; Telephony; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338312
Filename
4139407
Link To Document