Title :
Improved high temperature retention and endurance in HfON trapping memory with double quantum barriers
Author :
Chin, Albert ; Yang, H.J. ; Lin, S.H. ; Liao, C.C. ; Chen, W.J. ; Yeh, F.S.
Author_Institution :
Electron. Eng. Dept., Nat´´l Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
We have compared the device performance of double-quantum-barrier charge-trapping memory of a TaN/Ir3Si-[HfAlO-LaAlO3]-HfON0.2-[HfAlO-SiO2]-Si device with single barrier non-volatile memory MONOS devices at close EOT. At 150°C under fast 100 ¿s and low ±9 V P/E, the double-quantum-barrier charge-trapping device shows a 3.2 V initial ¿Vth and 2.7 V 10-year extrapolated retention. This retention decay rate is much improved from single barrier device.
Keywords :
digital storage; hafnium compounds; iridium compounds; lanthanum compounds; silicon compounds; tantalum compounds; temperature; TaN-Ir3Si-(HfAlO-LaAlO3)-HfON0.2-(HfAlO-SiO2)-Si; double quantum barrier; double-quantum-barrier charge-trapping memory; extrapolated retention; high temperature endurance; high temperature retention; single barrier nonvolatile memory MONOS device; temperature 150 C; Atherosclerosis; Circuits; Effective mass; Electron traps; High K dielectric materials; MONOS devices; Materials science and technology; Nonvolatile memory; SONOS devices; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734666
