DocumentCode
2146376
Title
NAND flash read/write cache directions for the personal computing platform
Author
Pon, Harry
Author_Institution
NAND Products Group, Intel Corp., Folsom, CA, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
815
Lastpage
818
Abstract
In 2007, NAND flash memory was first introduced into the personal computing platform by Intel in the form of a non-volatile read/write cache to augment the PC computing platform memory subsystem. This innovation provided faster random access to key data and files instead of requiring access to the magnetic hard disk drive. In its introductory form, utilizing then available NAND flash memory generation and architecture, the NAND flash read/write cache performed well on a PCI-express bus. However, the PC computing platform is evolving to further utilize the benefits of NAND flash memory to enable a better user experience to include: faster hibernations and resumes; a virtual SATA SSD (Solid State Drive) partition; user controls to select which applications receive accelerated execution; and increased data access speed for frequented data. In this paper, the changing PC platform and the NAND flash architecture, performance demands, memory interfaces, and the heightened reliability usage model creating the new computer platforms will be discussed.
Keywords
NAND circuits; cache storage; disc drives; flash memories; hard discs; memory architecture; personal computing; random-access storage; Intel; NAND flash memory architecture; NAND flash memory generation; NAND flash read/write cache directions; PC computing platform memory subsystem; PCI-express bus; data access speed; magnetic hard disk drive; memory interfaces; non-volatile read/write cache; personal computing platform; random access; solid state drive partition; virtual SATA SSD; Acceleration; Application software; Computer architecture; Hard disks; Memory architecture; Nonvolatile memory; Read-write memory; Resumes; Solid state circuits; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734667
Filename
4734667
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