Heterojunction bipolar transistors: status and directions

Author

Asbeck, Peter

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

65

Lastpage

69

Abstract

A tutorial review is presented of heterojunction bipolar transistor (HBT) principles; the technological status and performance of Si-, GaAs-, and InP-based HBTs; and prospects for further advances in HBTs for digital, analog and microwave applications. Coherently strained structures and their advantages are discussed. The experimental achievement of f_t values above 150-GHz, f _max values above 200 GHz, and digital circuits clocked above 25 GHz is highlighted

Keywords

MMIC; bipolar integrated circuits; digital integrated circuits; heterojunction bipolar transistors; linear integrated circuits; reviews; solid-state microwave devices; 150 GHz; 200 GHz; 25 GHz; GaAs; HBT; III-V semiconductors; InP; Si; analogue applications; coherently strained structures; digital applications; digital circuits; elemental semiconductors; heterojunction bipolar transistor; microwave applications; review; Bipolar transistors; Capacitance; Charge carrier processes; Costs; Doping profiles; Electron emission; Heterojunction bipolar transistors; Microwave technology; Paper technology; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69461

Filename

69461