Memory evolution: Multi-functioning Unified-Random Access Memory (URAM)

A new paradigm for silicon memory technology is proposed. A technological breakthrough that will overcome the saturation in revenue obtained from `scaling¿, a novel type of fusion memory is presented. A high-speed DRAM and non-volatile flash memory are integrated in a single memory transistor. The memory cell is named unified-random access memory (URAM), as multi-functional operation is processed in a single memory cell. The paradigm shift from `scaling¿ to `multi-function¿ will create new value and continue the evolution of silicon memory technology.