Title :
SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation
Author :
Wei He ; Chan, D.S.H. ; Cho, Byung-Jin
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlOx compare to La2O3 deposition. The mechanism behind improvement is proposed. ALD LaAlOx is found to be thermally stable up to 850°C anneal. Compared with Al2O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking oxide demonstrate similar retention performance with much faster operation speed and better resistance to high operation voltage and high stress. The results indicate that LaAlOx is an attractive candidate as a blocking layer in SONOS type flash memory application.
Keywords :
atomic layer deposition; flash memories; high-k dielectric thin films; lanthanum compounds; ALD; LaAlOx; SONOS devices; atomic layer deposition; blocking oxide; flash memory; memory cell; retention; self-limiting behavior; temperature 850 degC; Aluminum; Annealing; Dielectric constant; Flash memory; Helium; High-K gate dielectrics; Lanthanum; Permittivity; SONOS devices; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734672
