SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

Author

Wei He ; Chan, D.S.H. ; Cho, Byung-Jin

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

835

Lastpage

838

Abstract

LaAlO_x with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlO_x compare to La₂O₃ deposition. The mechanism behind improvement is proposed. ALD LaAlO_x is found to be thermally stable up to 850Â°C anneal. Compared with Al₂O₃ blocking oxide control samples, the SONOS devices with LaAlO_x blocking oxide demonstrate similar retention performance with much faster operation speed and better resistance to high operation voltage and high stress. The results indicate that LaAlO_x is an attractive candidate as a blocking layer in SONOS type flash memory application.

Keywords

atomic layer deposition; flash memories; high-k dielectric thin films; lanthanum compounds; ALD; LaAlO_x; SONOS devices; atomic layer deposition; blocking oxide; flash memory; memory cell; retention; self-limiting behavior; temperature 850 degC; Aluminum; Annealing; Dielectric constant; Flash memory; Helium; High-K gate dielectrics; Lanthanum; Permittivity; SONOS devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734672

Filename

4734672