Title :
A Coplanar W-Band Power Amplifier MMIC Using Dual-Gate HEMTs
Author :
Tessmann, A. ; Haydl, W.H. ; Neumann, M. ; Kudszus, S. ; Hülsmann, A.
Author_Institution :
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, D-79108 Freiburg, Germany
Abstract :
A two-stage monolithic W-band power amplifier has been developed, using 0.15 ¿m AlGaAs/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only l × 2 mm2.
Keywords :
Circuits; Frequency; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338319
