Title :
FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, easier scaling, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications.
Keywords :
DRAM chips; ferroelectric devices; field effect memory circuits; field effect transistor circuits; DRAM cell size; FEDRAM; capacitor-less DRAM; ferroelectric-gate memory transistor structure; ferroelectric-gated field-effect transistor; Capacitors; Dielectrics; Energy consumption; FETs; Ferroelectric films; Ferroelectric materials; Hysteresis; MOSFETs; Polarization; Random access memory;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734674
