Title :
A symmetric non-quasi-static large-signal FET model with a truly consistent analytic determination from DC-and S-parameter data
Author :
Schmale, Ingo ; Kompa, Günter
Author_Institution :
University of Kassel, Fachgebiet Hochfrequenztechnik, Wilhelmshöher Allee 73, D-34121 Kassel, Germany, Tel: +49-561-804-6535, Fax: -6529, E-mail: schmale@ieee.org
Abstract :
A symmetric non-quasi-static large-signal model compatible to small-signal modelling is presented for GaAs-MESFETs and HEMTs. Analytic formulae for a direct extraction from de-embedded admittance-parameters are presented. As the large-signal model is consistently determined from DC-and S-parameter data, it enables both highly reliable non-linear simulations as well as it offers excellent accuracy in small-signal simulations. Ample experimental validation is finally provided.
Keywords :
Circuit simulation; Delay effects; Diodes; Electronic mail; Equivalent circuits; FETs; Frequency; HEMTs; MODFETs; Scattering parameters;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338322
