• DocumentCode
    2146587
  • Title

    Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si1-xGex layer

  • Author

    Lobanov, D.N. ; Novikov, A.V. ; Shaleev, M.V. ; Drozdov, Yu N. ; Krasilnik, Z.F. ; Yablonskiy, A.N.

  • Author_Institution
    Inst. of Phys. of Microstructures, Russian Acad. Sci., Nizhny Novgorod, Russia
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    Photoluminescence (PL) of SiGe/Si(001) self-assembled islands grown on a strained Si1-xGex layer (x≤20%) has been investigated. PL signal from the islands with different shapes and the nonlinear dependence of the intensity of the PL signal from the islands at room temperature on composition of the GeSi layer have been observed.
  • Keywords
    Ge-Si alloys; elemental semiconductors; island structure; photoluminescence; self-assembly; semiconductor growth; silicon; 293 to 298 K; GeSi layer composition; PL signal; SiGe-Si; SiGe-Si(001) self-assembled islands; photoluminescence; room temperature; strained Si1-xGex layer; Atomic force microscopy; Germanium silicon alloys; Microstructure; Optical buffering; Photoluminescence; Physics; Potential well; Shape; Silicon germanium; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516404
  • Filename
    1516404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146587