Title :
Direct Extraction of HBT Equivalent Circuit Model Using Dominant Pole Approximation
Author :
Shin, Jin-ho ; Jeon, Yongjoon ; Lim, Taeyun ; Kim, Hyung-Wook ; Chung, Ki-Woong
Author_Institution :
RF Device Team, Devices & Materials Lab., LG Corporate Institute of Technology(LGCIT), 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137-724, Korea
Abstract :
A new direct parameter extraction technique has been developed for HBT smallsignal hybrid-¿ equivalent circuit. The fictitious input (Rs) and output (RI) resistances are added to HBT. Based on 20 dB/decade frequency roll-off characteristics, the 3 dB current gain cut-off frequencies are measured for the overall circuit as a function of Rs and RL, to exactly determine the total base-collector capacitance(CT=C¿i+C¿x) the effective base resistance (rbx + rbi Ã(C¿i /CT)), and the base-emitter capacitance (C¿). Most important is the ability to clearly separate the effective base resistance from the frequency-dependent base resistance, Re(Z11-Z12). Assuming that (C¿I /CT) ~ emitter area/B-C junction area, an additional measurement of extrinsic base resistance (rbx), under the open collector bias condition, uniquely gives rbi, C¿i, and C¿x values. The modeled S-parameters closely fit the measured ones within 3 % error.
Keywords :
Area measurement; Capacitance measurement; Current measurement; Cutoff frequency; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Parameter extraction;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338324