• DocumentCode
    2146651
  • Title

    Photoluminescence of undoped and erbium-doped SiO/SiO2 multilayers

  • Author

    Jambois, O. ; Ardyanian, M. ; Wora-Adeola, G. ; Rinnert, H. ; Miska, P. ; Devaux, X. ; Vergnat, M.

  • Author_Institution
    Univ. Henri Poincare, Nancy, France
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    68
  • Lastpage
    70
  • Abstract
    We show the possibility to obtain amorphous SiO/SiO2 and silicon nanocrystal (Si-nc) superlattices by evaporation. The size of the Si-nc is well controlled. The coupling between the nanocrystals and erbium ions is studied.
  • Keywords
    amorphous state; erbium; evaporation; materials preparation; nanostructured materials; optical multilayers; photoluminescence; silicon compounds; superlattices; Si; Si-SiO2; Si-SiO2:Er; SiO-SiO2 multilayers; amorphous SiO-SiO2; erbium-doped multilayers; evaporation; nanocrystal-erbium ion coupling; photoluminescence; silicon nanocrystal; silicon superlattices; undoped multilayers; Annealing; Atmosphere; Erbium; Infrared spectra; Nanocrystals; Nonhomogeneous media; Photoluminescence; Semiconductor films; Silicon; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516406
  • Filename
    1516406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146651