Title :
Experimental research of MS/RF CMOS-process-compatible photodetector with STI
Author :
Wang, Xiuyuan ; Mao, Luhong ; Chen, HongDa ; Huang, Jiale ; Liu, Jinbin
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., China
Abstract :
A new structure of Si-photodetector in TSMC 0.18 μm CMOS process is introduced. Some critical parameters, such as dark current, responsivity and junction capacitance, were measured and analyzed. The experiment results are quite desirable.
Keywords :
CMOS integrated circuits; dark conductivity; elemental semiconductors; integrated optoelectronics; photodetectors; silicon; CMOS-process-compatible photodetector; MS/RF photodetector; STI; Si; Si-photodetector; dark current; junction capacitance; responsivity; CMOS process; Capacitance; Detectors; Electrodes; Isolation technology; Optical interconnections; Optical receivers; P-i-n diodes; Photodetectors; Radio frequency;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516408
