• DocumentCode
    2146688
  • Title

    Experimental research of MS/RF CMOS-process-compatible photodetector with STI

  • Author

    Wang, Xiuyuan ; Mao, Luhong ; Chen, HongDa ; Huang, Jiale ; Liu, Jinbin

  • Author_Institution
    Sch. of Electron. Inf. Eng., Tianjin Univ., China
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    74
  • Lastpage
    76
  • Abstract
    A new structure of Si-photodetector in TSMC 0.18 μm CMOS process is introduced. Some critical parameters, such as dark current, responsivity and junction capacitance, were measured and analyzed. The experiment results are quite desirable.
  • Keywords
    CMOS integrated circuits; dark conductivity; elemental semiconductors; integrated optoelectronics; photodetectors; silicon; CMOS-process-compatible photodetector; MS/RF photodetector; STI; Si; Si-photodetector; dark current; junction capacitance; responsivity; CMOS process; Capacitance; Detectors; Electrodes; Isolation technology; Optical interconnections; Optical receivers; P-i-n diodes; Photodetectors; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516408
  • Filename
    1516408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146688