Title :
Nonvolatile SRAM cell based on CuxO
Author :
Xue, Xiaoyong ; Jin, Gang ; Zhang, Ji ; Xu, Le ; Ding, Yiqing ; Xie, Yufeng ; Zhao, Changhong ; Chen, B.A. ; Lin, Yinyin
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
A nonvolatile static random access memory (NVSRAM) cell with two back-up CuxO memory devices is proposed in this paper. The manufacturing process is compatible with the standard CMOS process. By adopting a dynamic supply voltage scheme, the proposed cell can work correctly in four different operation modes. Compared with the standard SRAM cell, the proposed cell offers non-volatile storage which allows the unused blocks of SRAM to be powered down to save energy.
Keywords :
CMOS memory circuits; SRAM chips; copper compounds; CMOS process; CuxO; back-up memory devices; dynamic supply voltage scheme; nonvolatile SRAM cell; nonvolatile static random access memory cell; CMOS process; CMOS technology; Energy consumption; Leakage current; Logic devices; Manufacturing processes; Nonvolatile memory; Phase change materials; Random access memory; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734681
