DocumentCode
2146794
Title
A CMOS Compatible Power MOSFET for Low Voltage GHz Operation
Author
Vestling, Lars ; Bengtsson, Lars ; Olsson, Jörgen
Author_Institution
Uppsala University, The Ã\x85ngström Laboratory, Solid State Electronics, P.O. Box 534, SE-751 21 Uppsala, Sweden. e-mail: Lars.Vestling@angstrom.uu.se
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
21
Lastpage
24
Abstract
This paper presents a high performance microwave lateral double-diffused MOS (LDMOS) transistor for low voltage applications. The device is manufactured in an ordinary CMOS process without any complex processing steps. The device has a current gain cut-off frequency, fT of 6.5 GHz and a power gain cut-off frequency, fMAX, of 14 GHz. The power-added efficiency is 45 % and the output power is 25 dBm for a device with 2 mm gate width at 1 GHz.
Keywords
CMOS process; Cutoff frequency; Laboratories; Low voltage; MOSFET circuits; Microwave devices; Microwave transistors; Power MOSFET; Silicon; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338399
Filename
4139428
Link To Document