DocumentCode :
2146795
Title :
Optical properties of ultra thin single Si/SiO2 quantum wells
Author :
Pauc, N. ; Calvo, V. ; Eymery, J. ; Fournel, F. ; Magnea, N.
Author_Institution :
CEA, Grenoble, France
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
84
Lastpage :
86
Abstract :
We performed a low temperature photoluminescence study of ultra thin single Si/SiO2 quantum wells. We observe a strong quantum confinement effect and a high increase in the internal quantum efficiency in the thinnest wells.
Keywords :
elemental semiconductors; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; silicon-on-insulator; Si-SiO2; Si/SiO2 quantum wells; internal quantum efficiency; low temperature photoluminescence; optical properties; quantum confinement effect; ultrathin single quantum wells; Charge carrier processes; Crystallization; Ellipsometry; Photoluminescence; Potential well; Quantum dots; Radiative recombination; Silicon on insulator technology; Thickness measurement; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516412
Filename :
1516412
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2146795
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