Challenge of nanoelectronic materials and devices toward new nonvolatile memories

This paper shows that that H plays a role in the forming of oxide RRAM which is derived from studies of both the electrical and physical properties of the oxides. Going forward, there is a clear need for additional studies that combine careful physical and electrical characterization of oxide and sulfide RRAM devices, as electrical measurements alone are ambiguous. If a thorough understanding of the underlying physical mechanisms can be achieved, RRAM holds promise for becoming a low-cost, low-power, highly scalable solution for nonvolatile memory products for the IC industry.