Comparison of PN diodes and FETs as Phase Change Memory (PCM) driving devices

Author

Li, Lin ; Lu, Kailiang ; Kwong, K.C. ; He, Jin ; Chan, Mansun

Author_Institution

Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

928

Lastpage

931

Abstract

In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the 90 nm to 22 nm technology node, PN diodes are found to be a better choice for delivering higher programming currents down to 22 nm technology node due to the higher effective cross-sectional area of current flow. In addition, the GAA MOSFETs are subject to serious cross-talk issues that may limit their performance in PCM applications.

Keywords

MOSFET; p-i-n diodes; phase change memories; 3D device simulations; PN diodes; driving devices; field effect transistors; higher programming currents; phase change memory; size 22 nm; size 90 nm; vertical gate-all-around MOSFET; Crystalline materials; Diodes; FETs; Immune system; MOSFETs; Material storage; Phase change materials; Phase change memory; Solid modeling; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734686

Filename

4734686