Title :
Comparison of PN diodes and FETs as Phase Change Memory (PCM) driving devices
Author :
Li, Lin ; Lu, Kailiang ; Kwong, K.C. ; He, Jin ; Chan, Mansun
Author_Institution :
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the 90 nm to 22 nm technology node, PN diodes are found to be a better choice for delivering higher programming currents down to 22 nm technology node due to the higher effective cross-sectional area of current flow. In addition, the GAA MOSFETs are subject to serious cross-talk issues that may limit their performance in PCM applications.
Keywords :
MOSFET; p-i-n diodes; phase change memories; 3D device simulations; PN diodes; driving devices; field effect transistors; higher programming currents; phase change memory; size 22 nm; size 90 nm; vertical gate-all-around MOSFET; Crystalline materials; Diodes; FETs; Immune system; MOSFETs; Material storage; Phase change materials; Phase change memory; Solid modeling; Switches;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734686
