Direct experimental evidence of indirect bandgap transitions in strained GaInAs(P)/InP quantum well structures

Author

Härle, V. ; Bolay, H. ; Lux, E. ; Scholz, F. ; Michler, P. ; Moritz, A. ; Forner, T. ; Hangleiter, A.

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

6

Lastpage

9

Abstract

An additional low energy peak was found in low temperature photoluminescence of tensile strained GaInAs/InP quantum well structures. Owing to the tensile strain, the uppermost valence band state is shifted out of the Brillouin zone center thus giving rise to the formation of an indirect band structure. In consequence, the low energy peak was attributed to a phonon assisted transition of an indirect exciton. Carrier lifetime measurements confirm this interpretation

Keywords

III-V semiconductors; gallium arsenide; indium compounds; luminescence of inorganic solids; phonon-exciton interactions; photoluminescence; semiconductor quantum wells; GaInAs-InP; GaInAsP-InP; carrier lifetime measurements; indirect bandgap transitions; indirect exciton; low energy peak; low temperature photoluminescence; phonon assisted transition; strained GaInAs(P)/InP quantum well structures; tensile strain; uppermost valence band state; Capacitive sensors; Charge carrier processes; Indium phosphide; Optical modulation; Phonons; Photoluminescence; Photonic band gap; Quantization; Temperature; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328146

Filename

328146