• DocumentCode
    2146858
  • Title

    High-extraction-efficiency Si-QD LED using rugged surface pattern

  • Author

    Kim, K.H. ; Shin, J.H. ; Park, N.M. ; Kim, T.Y. ; Hur, C. ; Cho, K.S. ; Sung, G.Y.

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    90
  • Lastpage
    92
  • Abstract
    This study presents a more improved Si-LED using micron scale rugged surface pattern. This paper reports experimental results and comparisons with other studies. The differences between experimental and theoretical results from electroluminescence of Si-QD LEDs are also reported.
  • Keywords
    electroluminescence; elemental semiconductors; light emitting diodes; semiconductor quantum dots; silicon; Si; Si-QD LED; electroluminescence; high-extraction-efficiency; rugged surface pattern; CMOS technology; Etching; Hydrogen; Light emitting diodes; Optical refraction; Optical variables control; Photonics; Refractive index; Semiconductor materials; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516414
  • Filename
    1516414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146858