Title :
High-extraction-efficiency Si-QD LED using rugged surface pattern
Author :
Kim, K.H. ; Shin, J.H. ; Park, N.M. ; Kim, T.Y. ; Hur, C. ; Cho, K.S. ; Sung, G.Y.
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
This study presents a more improved Si-LED using micron scale rugged surface pattern. This paper reports experimental results and comparisons with other studies. The differences between experimental and theoretical results from electroluminescence of Si-QD LEDs are also reported.
Keywords :
electroluminescence; elemental semiconductors; light emitting diodes; semiconductor quantum dots; silicon; Si; Si-QD LED; electroluminescence; high-extraction-efficiency; rugged surface pattern; CMOS technology; Etching; Hydrogen; Light emitting diodes; Optical refraction; Optical variables control; Photonics; Refractive index; Semiconductor materials; Silicon compounds;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516414
