DocumentCode
2146872
Title
Mitigation of free-carrier absorption and efficiency increase in silicon waveguide lasers by bidirectional pumping
Author
Krause, Michael ; Renner, Hagen ; Brinkmeyer, Ernst
Author_Institution
Optische Kommunikationstechnik, Technische Univ. Hamburg-Harburg, Hamburg, Germany
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
93
Lastpage
95
Abstract
Continuous-wave Raman lasing in silicon waveguides can be made significantly more efficient when the waveguide is pumped from both ends instead of only one end in order to mitigate free-carrier absorption.
Keywords
Raman lasers; elemental semiconductors; optical pumping; semiconductor lasers; silicon; waveguide lasers; Raman lasing; Si; bidirectional pumping; continuous-wave lasing; free-carrier absorption mitigation; silicon lasers; silicon waveguides; waveguide lasers; Absorption; Laser excitation; Optical waveguides; Power lasers; Pulse amplifiers; Pump lasers; Raman scattering; Silicon; Stimulated emission; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516415
Filename
1516415
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