Bistable resistive switching of pulsed laser deposited polycrystalline La0.67Sr0.33MnO3 films

Author

Huang, Lina ; Qu, Bingjun ; Liu, Litian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

936

Lastpage

939

Abstract

Bistable resistive switching of polycrystalline La_0.67Sr_0.33MnO₃ (LSMO) thin films prepared by pulsed laser deposition (PLD) was investigated by applying voltage pulses with current compliance. Metallic LSMO films sandwiched by Ag and Pt electrodes show nonvolatile and reversible resistance switching behavior from a higher resistance state to a lower state with no data loss upon continuous readout. An active pulse width window was observed and the related threshold voltage was measured. Furthermore, the write/erase endurance switching was estimated over 103 cycles, demonstrating a strong potential with respect to future nonvolatile random access memory applications.

Keywords

lanthanum compounds; manganese compounds; pulsed laser deposition; random-access storage; semiconductor thin films; strontium compounds; La_0.67Sr_0.33MnO₃; bistable resistive switching; metallic films; nonvolatile random access memory; polycrystalline thin films; pulsed laser deposition; Electrical resistance measurement; Electrodes; Nonvolatile memory; Optical pulses; Pulse measurements; Pulsed laser deposition; Space vector pulse width modulation; Sputtering; Strontium; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734688

Filename

4734688