W-band high power passivated 0.15 μm InAlAs/InGaAs HEMT device

Author

Hwang, K.C. ; Ho, P. ; Kao, My ; Fu, S.T. ; Liu, J. ; Chao, P.C. ; Smith, P.M. ; Swanson, A.W.

Author_Institution

Martin Marietta Electron. Lab., Syracuse, NY, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

18

Lastpage

20

Abstract

We report a successful demonstration of state-of-the-art W-band high power passivated 0.15×50 μm InAlAs/InGaAs/InP high electron mobility transistor (HEMT). The 50 μm gate width InP-HEMTs have shown typical extrinsic transconductance (g_m) of 1000 mS/mm with extremely high drain current of 880 mA/mm. The channel breakdown voltage, which is closely related to power performance, is 6.0 V which is significantly higher than that of pseudomorphic InP-HEMTs. At 94 GHz, the output power density of the device is 300 mW/mm with 21% power added efficiency. This output power is the highest ever reported for passivated InP-HEMT device at this frequency range

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; passivation; power transistors; solid-state microwave devices; 0.15 micron; 1000 mS/mm; 21 percent; 50 micron; 6 V; 94 GHz; EHF; HEMT device; InP; MODFET; W-band; channel breakdown voltage; high electron mobility transistor; high power MM-wave device; passivated device; Cutoff frequency; Electrons; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Performance gain; Power generation; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328149

Filename

328149