Title :
W-band high power passivated 0.15 μm InAlAs/InGaAs HEMT device
Author :
Hwang, K.C. ; Ho, P. ; Kao, My ; Fu, S.T. ; Liu, J. ; Chao, P.C. ; Smith, P.M. ; Swanson, A.W.
Author_Institution :
Martin Marietta Electron. Lab., Syracuse, NY, USA
Abstract :
We report a successful demonstration of state-of-the-art W-band high power passivated 0.15×50 μm InAlAs/InGaAs/InP high electron mobility transistor (HEMT). The 50 μm gate width InP-HEMTs have shown typical extrinsic transconductance (gm) of 1000 mS/mm with extremely high drain current of 880 mA/mm. The channel breakdown voltage, which is closely related to power performance, is 6.0 V which is significantly higher than that of pseudomorphic InP-HEMTs. At 94 GHz, the output power density of the device is 300 mW/mm with 21% power added efficiency. This output power is the highest ever reported for passivated InP-HEMT device at this frequency range
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; passivation; power transistors; solid-state microwave devices; 0.15 micron; 1000 mS/mm; 21 percent; 50 micron; 6 V; 94 GHz; EHF; HEMT device; InP; MODFET; W-band; channel breakdown voltage; high electron mobility transistor; high power MM-wave device; passivated device; Cutoff frequency; Electrons; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Performance gain; Power generation; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328149
