DocumentCode
2146945
Title
Resistive switching characteristics of metal oxide for nonvolatile memory applications
Author
Dong, R. ; Hasan, M. ; Choi, H.J. ; Lee, D.S. ; Pyun, M.B. ; Seong, D.-J. ; Hwang, Hyunsang
Author_Institution
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
901
Lastpage
904
Abstract
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
Keywords
MIS devices; random-access storage; storage management chips; metal oxides; nonvolatile memory applications; resistive switching characteristics; switching uniformity; Conducting materials; Copper; Electrodes; Nonvolatile memory; Power semiconductor switches; Scalability; Schottky barriers; Semiconductor materials; Space technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734691
Filename
4734691
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