Title :
Resistive switching characteristics of metal oxide for nonvolatile memory applications
Author :
Dong, R. ; Hasan, M. ; Choi, H.J. ; Lee, D.S. ; Pyun, M.B. ; Seong, D.-J. ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
Keywords :
MIS devices; random-access storage; storage management chips; metal oxides; nonvolatile memory applications; resistive switching characteristics; switching uniformity; Conducting materials; Copper; Electrodes; Nonvolatile memory; Power semiconductor switches; Scalability; Schottky barriers; Semiconductor materials; Space technology; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734691
