DocumentCode
2146964
Title
Mixed mode bending test for interfacial adhesion in semiconductor applications
Author
Thijsse, J. ; van Driel, W.D. ; van Gils, M.A.J. ; van der Sluis, O.
Author_Institution
Philips Appl. Technol., Eindhoven
fYear
0
fDate
0-0 0
Abstract
Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews (1990; 1991). It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity
Keywords
adhesion; bending; cracks; delamination; interface phenomena; mechanical testing; crack length; delamination testing; finite element model; interface strength; interfacial adhesion; mixed mode bending test; mode dependency; semiconductor packages; stable crack growth measurement; Adhesives; Analytical models; Delamination; Equations; Finite element methods; Gas insulated transmission lines; Kinetic energy; Moisture; Predictive models; Semiconductor device testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2006. Proceedings. 56th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
1-4244-0152-6
Type
conf
DOI
10.1109/ECTC.2006.1645917
Filename
1645917
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