• DocumentCode
    2146964
  • Title

    Mixed mode bending test for interfacial adhesion in semiconductor applications

  • Author

    Thijsse, J. ; van Driel, W.D. ; van Gils, M.A.J. ; van der Sluis, O.

  • Author_Institution
    Philips Appl. Technol., Eindhoven
  • fYear
    0
  • fDate
    0-0 0
  • Abstract
    Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews (1990; 1991). It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity
  • Keywords
    adhesion; bending; cracks; delamination; interface phenomena; mechanical testing; crack length; delamination testing; finite element model; interface strength; interfacial adhesion; mixed mode bending test; mode dependency; semiconductor packages; stable crack growth measurement; Adhesives; Analytical models; Delamination; Equations; Finite element methods; Gas insulated transmission lines; Kinetic energy; Moisture; Predictive models; Semiconductor device testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2006. Proceedings. 56th
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    1-4244-0152-6
  • Type

    conf

  • DOI
    10.1109/ECTC.2006.1645917
  • Filename
    1645917